| PART |
Description |
Maker |
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29 |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory
From old datasheet system
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
CMOS 3.3V-only block erase flash memory
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MSM534001E |
524,288-Word x 8-Bit MASKROM
524288-Word x 8-Bit MASKROM
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| TC514800AFTLL-70 TC514800AFTLL-80 TC514800AJLL TC5 |
524288 WORD X 8 BIT DYNAMIC RAM
|
Toshiba Corporation
Toshiba Semiconductor
|
| M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5Y5636TG-20 M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5 |
Memory>Low Power SRAM
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| HN62334BTT-15 |
524288-word x 8-bit CMOS Mask Programmable ROM
|
Hitachi,Ltd.
|
